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 1N5819HW
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features
* * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application
NEW PRODUCT
SOD-123 Dim A
H G D
Min 3.55 2.55 1.40 -- 0.25 -- 0
Max 3.85 2.85 1.70 1.35 -- 0.10 8
J
B C D E G H
Mechanical Data
* * * * * * * * * Case: SOD-123, Plastic Plastic Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Polarity: Cathode Band Leads: Solderable per MIL-STD-202, Method 208 Marking: Date Code and Type Code, See Page 3 Type Code: SL Weight: 0.01 grams (approx.) Ordering Information: See Page 3
A B
0.55 Typical 0.11 Typical
C
E
J a
All Dimensions in mm
Maximum Ratings
@ TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TL = 90C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Power Dissipation (Note 2) Typical Thermal Resistance Junction to Ambient (Note 2) Operating and Storage Temperature Range @ IR = 1.0mA Symbol VRRM VRWM VR VR(RMS) IO IFSM Pd RqJA Tj, TSTG 1N5819HW 40 28 1.0 25 450 222 -65 to +125 Unit V V A A mW C/W C
DS30217 Rev. 6 - 2
1 of 3
1N5819HW
NEW PRODUCT
Electrical Characteristics
Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1)
@ TA = 25C unless otherwise specified Symbol V(BR)R VF Min 40 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 10 1 15 1.5 110 Max 3/4 0.320 0.450 0.750 1.0 10 50 2 75 3 3/4 Unit V V mA mA mA mA mA mA pF Test Condition IR = 1.0mA IF = 0.1A IF = 1.0A IF = 3.0A VR = 40V, TA = 25C VR = 40V, TA = 100C VR = 4V, TA = 25C VR = 4V, TA = 100C VR = 6V, TA = 25C VR = 6V, TA = 100C VR = 4V, f = 1.0MHz
Reverse Leakage Current (Note 1)
IR
Total Capacitance
CT
Notes:
1. Short duration pulse test used to minimize self-heating effect. 2. Device mounted on FR-4 PC Board, 2"x2", 2 oz. Copper, single sided, Cathode pad dimensions 0.75"x1.0", Anode pad dimensions 0.25"x1.0".
IF, INSTANTANEOUS FORWARD CURRENT (A)
1.0 IO, AVERAGE OUTPUT CURRENT (A)
5
0.8
4
0.6
3
2
0.4
1
0.2
Single Pulse Half-Wave 60 Hz Resistive or Inductive Load
Tj = 25C Tj = 125C Pulse Width = 300 ms 2% Duty Cycle
0 0 0.5 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics
0 10 40 60 80 100 120 140 TT, TERMINAL TEMPERATURE (C) Fig. 1 Forward Current Derating Curve
25 IFSM, PEAK FORWARD SURGE CURRENT (A)
1000
Tj = 25C f = 1MHz
20
15
CT, TOTAL CAPACITANCE (pF)
8.3ms Single Half Sine-Wave JEDEC Method
100
10
5
10 0.1 1.0 10 100
0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance
DS30217 Rev. 6 - 2
2 of 3
1N5819HW
TA, AMBIENT TEMPERATURE (C)
125
R(q) JA = 300C/W Note 1
IR, INSTANTANEOUS REVERSE CURRENT (mA)
150
10.0
NEW PRODUCT
1.0
Tj = 75C
100
0.1
Tj = 25C
75
0.01
50
25 1 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Fig. 5 Typical Safe Operating Area
0.001 0 5 10 15 20 25 30 35 40 45 VR, RATED PEAK REVERSE VOLTAGE (V) Fig. 6 Typical Reverse Characteristics
Ordering Information
Device 1N5819HW-7 Notes:
(Note 3) Packaging SOD-123 Shipping 3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XX = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September)
XX
Date Code Key Year Code Month Code Jan 1 Feb 2 2001 M March 3
YM
2002 N Apr 4 May 5
2003 P Jun 6
2004 R Jul 7
2005 S Aug 8 Sep 9
2006 T Oct O
2007 U Nov N
2008 V Dec D
DS30217 Rev. 6 - 2
3 of 3
1N5819HW


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